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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1170 DESCRIPTION *With MT-200 package *High power dissipation *Complement to type 2SC2774 APPLICATIONS *Audio and general purpose applications PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -6 -17 -5 200 150 -55~150 UNIT V V V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ; IB=0 B 2SA1170 MIN -200 -6 TYP. MAX UNIT V V IE=-1mA ; IC=0 IC=-10A ;IB=-1A VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-8A ; VCE=-4V IC=-1A ; VCE=-12V -2.5 -100 -100 20 20 V A A MHz Switching times tr tstg tf Rise time Storage time Fall time IC=-10A; IB1=- IB2=-1A RL=4;VCC=-40V 0.6 0.9 0.2 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1170 Fig.2 outline dimensions 3 |
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